Advanced Indium Arsenide-Based Hemt Architectures for Terahertz Applications

适合太赫兹应用的先进的基于砷化铟的高电子迁移率晶体管架构

物理学史

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作      者
出  版 社
出版时间
2023年09月25日
装      帧
平装
ISBN
9780367554156
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页      码
130
开      本
9.21 x 6.14 x 0.31
语      种
英文
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图书简介
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.Features:Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency responseIllustrates noise characterization of optimized indium arsenide HEMTsIntroduces terahertz electronics including sources for terahertz applications.This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
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