Defect-Induced Magnetism in Oxide Semiconductors

电子技术

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作      者
出  版 社
出版时间
2023年05月24日
装      帧
平装
ISBN
9780323909075
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页      码
736
语      种
英文
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库存 30 本
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图书简介
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering.
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