Ionizing Radiation Effects in Electronics:From Memories to Imagers

电子学中的电离辐射效应:从存储器到成像仪

半导体技术

售   价:
658.00
发货周期:预计5-7周发货
出  版 社
出版时间
2020年09月30日
装      帧
平装
ISBN
9780367655952
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页      码
412
开      本
234 x 156 mm (6.14 x 9.21
语      种
英文
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图书简介
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques.The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then:Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memoriesExamines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuitsExplores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs)Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
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