图书简介
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Preface xi 1 Introduction to Field-Effect Transistors 1 1.1 Transistor Action 2 1.2 Metal-Oxide-Semiconductor Field-Effect Transistors 4 1.3 MOSFET Circuits: The Need for Complementary MOS 9 1.4 The Need for CMOS Scaling 11 1.5 Moore’s Law 13 1.6 Koomey’s Law 13 1.7 Challenges in Scaling the MOSFET 13 1.8 Conclusion 23 References 23 2 Emerging FET Architectures 27 2.1 Tunnel FETs 28 2.2 Impact Ionization MOSFET 34 2.3 Bipolar I-MOS 39 2.4 Negative Capacitance FETs 41 2.5 Two-Dimensional FETs 46 2.6 Nanowire FETs 49 2.7 Nanotube FETs 51 2.8 Conclusion 57 References 58 3 Fundamentals of Junctionless Field-Effect Transistors 67 3.1 Device Structure 69 3.2 Operation 70 3.3 Design Parameters 80 3.4 Parameters that Affect the Performance 82 3.5 Beyond Silicon JLFETS: Other Materials 100 3.6 Challenges 103 3.7 Conclusion 110 References 111 4 Device Architectures to Mitigate Challenges in Junctionless Field-Effect Transistors 125 4.1 Junctionless Accumulation-Mode Field-Effect Transistors 126 4.2 Realizing Efficient Volume Depletion 129 4.3 SOI JLFET with a High-? Box 131 4.4 Bulk Planar JLFET 137 4.5 JLFET with a Nonuniform Doping 140 4.6 JLFET with a Step Doping Profile 144 4.7 Multigate JLFET 149 4.8 JLFET with a High-? Spacer 153 4.9 JLFET with a Dual Material Gate 157 4.10 Conclusion 162 References 162 5 Gate-Induced Drain Leakage in Junctionless Field-Effect Transistors 173 5.1 Hole Accumulation 174 5.2 Parasitic BJT Action 176 5.3 Impact of BTBT-Induced Parasitic BJT Action on Scaling 177 5.4 Impact of Silicon Film Thickness on GIDL 179 5.5 Impact of Doping on GIDL 187 5.6 Impact of Spacer Design on GIDL 189 5.7 Nature of GIDL in Different NWFET Configurations 190 5.8 Device Architectures to Mitigate GIDL 199 5.9 Conclusion 248 References 249 6 Impact Ionization in Junctionless Field-Effect Transistors 255 6.1 Impact Ionization 256 6.2 Floating Body Effects in Silicon-on-Insulator MOSFETs 256 6.3 Nature of Impact Ionization in JLFETs 260 6.4 Zero Gate Oxide Thickness Coefficient 263 6.5 Single Transistor Latch-Up in JLFETs 266 6.6 Impact of Body Bias on Impact Ionization in JLFETs 267 6.7 Subband Gap Impact Ionization in DGJLFETS with Asymmetric Operation 268 6.8 Impact of Gate Misalignment on Impact Ionization in DGJLFETs 270 6.9 Spacer Design Guideline from Impact Ionization Perspective 272 6.10 Hysteresis and Snapback in JLFETs 273 6.11 Impact of Heavy-Ion Irradiation on JLFETs 275 6.12 Conclusions 276 References 276 7 Junctionless Devices Without Any Chemical Doping 281 7.1 Charge Plasma Doping 282 7.2 Charge Plasma Based p-n Diode 283 7.3 Junctionless I-MOS FET 288 7.4 Junctionless Tunnel FETs 290 7.5 JLTFET on a Highly Doped Silicon Film 294 7.6 Bipolar Enhanced JLTFET 294 7.7 Junctionless FETS Without Any Chemical Doping 297 7.8 Challenges for CPJLFETs 302 7.9 Electrostatic Doping Based FETs 312 7.10 Conclusions 319 References 319 8 Modeling Junctionless Field-Effect Transistors 327 8.1 Introduction to FET Modeling 328 8.2 Surface Potential Modeling of JLFETs 330 8.3 Charge-Based Modeling Approach 351 8.4 Drain Current Modeling Approach 355 8.5 Modeling Short-Channel JLFETs 365 8.6 Modeling Quantum Confinement 372 8.7 Conclusion 379 References 379 9 Simulation of JLFETS Using Sentaurus TCAD 385 9.1 Introduction to TCAD 386 9.2 Tool Flow 387 9.3 Sample Input Deck for Long-Channel JLFETS 391 9.4 Model Calibration 407 9.5 Model Calibration for Short-Channel JLFETs 409 9.6 Model Calibration for NWFETS 422 References 436 10 Conclusion and Perspectives 439 10.1 JLFETS As a Label-Free Biosensor 441 10.2 JLFETS As Capacitorless DRAM 443 10.3 Nanowire Junctionless NAND Flash Memory 444 10.4 Junctionless Polysilicon TFTS with a Hybrid Channel 447 10.5 JLFETS for 3D Integrated Circuits 449 10.6 Summary 450 References 451 Index 457
Trade Policy 买家须知
- 关于产品:
- ● 正版保障:本网站隶属于中国国际图书贸易集团公司,确保所有图书都是100%正版。
- ● 环保纸张:进口图书大多使用的都是环保轻型张,颜色偏黄,重量比较轻。
- ● 毛边版:即书翻页的地方,故意做成了参差不齐的样子,一般为精装版,更具收藏价值。
关于退换货:
- 由于预订产品的特殊性,采购订单正式发订后,买方不得无故取消全部或部分产品的订购。
- 由于进口图书的特殊性,发生以下情况的,请直接拒收货物,由快递返回:
- ● 外包装破损/发错货/少发货/图书外观破损/图书配件不全(例如:光盘等)
并请在工作日通过电话400-008-1110联系我们。
- 签收后,如发生以下情况,请在签收后的5个工作日内联系客服办理退换货:
- ● 缺页/错页/错印/脱线
关于发货时间:
- 一般情况下:
- ●【现货】 下单后48小时内由北京(库房)发出快递。
- ●【预订】【预售】下单后国外发货,到货时间预计5-8周左右,店铺默认中通快递,如需顺丰快递邮费到付。
- ● 需要开具发票的客户,发货时间可能在上述基础上再延后1-2个工作日(紧急发票需求,请联系010-68433105/3213);
- ● 如遇其他特殊原因,对发货时间有影响的,我们会第一时间在网站公告,敬请留意。
关于到货时间:
- 由于进口图书入境入库后,都是委托第三方快递发货,所以我们只能保证在规定时间内发出,但无法为您保证确切的到货时间。
- ● 主要城市一般2-4天
- ● 偏远地区一般4-7天
关于接听咨询电话的时间:
- 010-68433105/3213正常接听咨询电话的时间为:周一至周五上午8:30~下午5:00,周六、日及法定节假日休息,将无法接听来电,敬请谅解。
- 其它时间您也可以通过邮件联系我们:customer@readgo.cn,工作日会优先处理。
关于快递:
- ● 已付款订单:主要由中通、宅急送负责派送,订单进度查询请拨打010-68433105/3213。
本书暂无推荐
本书暂无推荐