Ferroelectricity in Doped Hafnium Oxide:Materials Properties and Devices(Woodhead Publishing Series in Electronic and Optical Materials)

掺杂法氧化氢的铁电:材料特性和设备

材料科学基础学科

售   价:
1764.00
发货周期:预计4-6周发货
作      者
出  版 社
出版时间
2019年03月01日
装      帧
平装
ISBN
9780081024300
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页      码
572
语      种
英文
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图书简介
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
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