Field Effect Transistors, A Comprehensive Overview:From Basic Concepts to Novel Technologies

场效应晶体管综述:基本概念到新技术

电子技术

售   价:
1213.00
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2016年02月19日
装      帧
精装
ISBN
9781119155492
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页      码
480
开      本
155.6x235mm
语      种
英文
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图书简介
This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales.
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Harvard Library
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