Carrier Transport in Nanoscale Mos Transistors(Wiley - IEEE)

纳米级 MOS 晶体管的载流子传输

电子技术

售   价:
1043.00
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2016年08月24日
装      帧
精装
ISBN
9781118871669
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页      码
264
开      本
168.3x244.5mm
语      种
英文
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图书简介
Technologies in nano-electronics have been rapidly advancing, and new types of devices and new electronic materials have been invented and developed.The conventional theoretical framework of electronic devices such as MOSFET and lasers are still very important, as is understanding their operating principles to perform actual device design. As a result, students and researchers are required to study many subjects covering conventional classical theories to advanced quantum transport and atomistic band theories. This book aims to teach them the important concepts and knowledge from quantum theory to advanced integrated devices systematically.  The authors explain the physics of advanced field-effect transistors, including multi-gate FETs, tunnel FET, graphene FET and thermal concerns. To arrive at these concepts, they develop the necessary fundamental basis of solid-state physics, quantum mechanics and conventional MOS transistors, covering a wide range of concepts merged in a single book. Provisional Contents include chapters on:- Si MOS transistors / Fundamentals of quantum theory / Band theory / Electronic theory for bulk semiconductors / Carrier transport / Monte Carlo simulation / Electronic theory for nanoscale semiconductors /  Emerging MOS devices and technologies.  
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