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Symbols; Important Formulae and Expressions; 1 : Electron Dynamics; Introduction 2; 1.1 Conduction of Electricity through Gases; 1.1.1 Glow Discharge; 1.2 Motion of Charged Particle in Electric Field; 1.2.1 Energy Acquired by Electron; 1.2.2 Electron Transit Time; 1.3 Motion of a Charged Particle in Magnetic Field; 1.4 Motion of Charged Particle in Combined Electric and Magnetic Field; 1.5 Cathode-ray Tube; 1.5.1 Focussing with Electric Fields; 1.5.2 Focussing with Magnetic Field; 1.5.3 Deflection Systems; 2 : Growth and Crystal Properties of Semiconductors; Introduction; 2.1 Semiconductor Materials; 2.2 Types of Solids; 2.3 Crystal Lattices; 2.3.1 Unit Cell; 2.3.2 Cubic Lattices; 2.3.3 Crystal Planes and Directions; 2.3.4 Diamond Lattice; 2.4 Atomic Bonding; 2.4.1 Van der Waals Bond; 2.4.2 Ionic Bond; 2.4.3 Covalent Bond; 2.4.4 Metallic Bond; 2.5 Imperfections and Impurities in Solids; 2.5.1 Imperfections; 2.5.2 Impurities; 2.6 Bulk Crystal Growth; 2.6.1 Starting Material; 2.6.2 Single-crystal Ingots; 2.7 Epitaxial Growth; 2.7.1 Vapour-phase Epitaxy; 2.7.2 Liquid-phase Epitaxy; 2.7.3 Molecular Beam Epitaxy; 3 : Energy Bands and Charge Carriers in Semiconductors; Introduction; 3.1 Bonding Force and Formation of Energy Bands; 3.2 E-k Diagrams; 3.2.1 Band Structure Modification in Semiconductors; 3.4 Charge Carriers in Semiconductors; 3.4.1 Electrons and Holes; 3.4.2 Intrinsic Semiconductor; 3.4.3 Extrinsic Semiconductor; 3.5 Carrier Concentrations in Semiconductors; 3.5.1 Fermi Level; 3.5.2 Equilibrium Electron and Hole Concentrations; 3.5.3 Temperature Dependence of Carrier Concentrations; 3.5.4 Compensation; 3.6 Carrier Drift; 3.6.1 Mobility and Conductivity; 3.6.2 High-field effect; 3.6.3 Hall Effect; 3.7 Carrier Diffusion; 3.7.1 Diffusion Current Density; 3.7.2 Total Current Density; 3.8 Graded Impurity Distribution; 3.8.1 Induced Field; 3.8.2 Einstein Relation; 4 : Excess Carriers in Semiconductors; Introduction; 4.1 Semiconductor in Equilibrium; 4.2 Excess Carrier Generation and Recombination; 4.2.1 Optical Absorption; 4.2.2 Excess Minority Carrier Lifetime; 4.3 Carrier Lifetime (General Case); 4.3.1 Shockley-Read-Hall Theory; 4.3.2 Low Injection; 4.4 Diffusion and Recombination; 4.4.1 Continuity Equation; 4.4.2 Haynes-Shockley Experiment; 4.5 Quasi-Fermi Energy Levels; 4.6 Surface Effects; 4.6.1 Surface States; 4.6.2 Surface Recombination Velocity; 5 : p-n Junction; Introduction; 5.1 Fabrication of p-n Junctions; 5.1.1 p-n Junction Formation; 5.1.2 Thermal Oxidation; 5.1.3 Diffusion; 5.2 Basic p-n Junction; 5.2.1 Basic Structure; 5.2.2 No Applied Bias; 5.2.3 Built-in Electric Field; 5.2.4 Space-charge Region Width; 5.3 Reverse-biased p-n Junction; 5.3.1 Energy Band Diagram; 5.3.2 Space-charge Width and Electric Field; 5.3.2 Depletion Capacitance; 5.3.4 One-sided Abrupt Junction; 5.4 Junctions With Non-uniform Doping; 5.4.1 Linearly Graded Junctions; 5.4.2 Hyper-abrupt Junctions; 5.5 Varactor Diode; 5.6 Junction Breakdown; 5.6.1 Zener Breakdown; 5.6.2 Avalanche Breakdown; 5.7 Tunnel Diode; 6 : p-n Junction Current; Introduction; 6.1 p-n Junction Current Flow; 6.1.1 Charge Flow in a p-n Junction; 6.1.2 Ideal Current-Voltage Characteristics; 6.1.3 Boundary Conditions; 6.1.4 Minority Carrier Distribution; 6.1.5 Junction Current in Ideal p-n Junction; 6.1.6 Short Diode; 6.2 Small-signal Model of p-n Junction; 6.2.1 Diffusion Resistance; 6.2.2 Diffusion Capacitance; 6.2.3 Equivalent Circuit; 6.3 Generation-Recombination Currents; 6.3.1 Reverse-bias Generation Current; 6.3.2 Forward-bias Recombination Current; 6.3.3 Net Forward-bias Current; 6.4 Junction Diode Switching Times; 7 : Metal-Semiconductor Junctions and Hetero-junctions; Introduction; 7.1 Metal-Semiconductor Contacts; 7.1.1 Schottky Model; 7.1.2 Space-charge Width and Junction Capacitance; 7.1.3 Characteristics Based on Emission Model; 7.1.4 Schottky Effect; 7.1.5 Tunnelling Current; 7.2 Effect of Surface States and Interface; 7.3 Metal-Semiconductor Ohmic Contacts; 7.3.1 Specific Contact Resistance; 7.4 Heterojunctions; 7.4.1 Energy Band Diagram; 7.4.2 Two-dimensional Electron Gas; 7.4.3 Quantum Confinement of Carriers; 8 : Bipolar Junction Transistors; Introduction; 8.1 Fundamentals of Bipolar Junction Transistors; 8.2 Current Components and Relations; 8.3 Important Notations and Configurations; 8.4 BJT Characteristics; 8.5 Current Gains for Transistor; 8.6 Minority Carrier Distribution; 8.6.1 Base Region; 8.6.2 Emitter Region; 8.6.3 Collector Region; 8.7 Models for Bipolar Junction Transistors; 8.7.1 Ebers-Moll Model; 8.7.2 Gummel-Poon Model; 8.7.3 Hybrid-pi Model; 8.7.4 h-parameter Equivalent Circuit Model; 8.8 Important Configuration of BJT; 8.8.1 Common-emitter Amplifier; 8.8.2 Common-base Amplifier; 8.8.3 Common-collector Amplifier; 8.9 Thermal Runaway; 8.10 Kirk Effect; 8.11 Frequency Limitation for Transistor; 8.12 Webster Effect; 8.13 High-frequency Transistors; 8.14 Switching Characteristics of BJT; 8.14.1 Schottky Transistor; 9 : Field-effect Transistor; Introduction; 9.1 Junction-field-effect Transistor; 9.1.1 Operating Principle; 9.1.2 Current-Voltage Characteristics; 9.2 Metal-semiconductor Field-effect Transistor; 9.2.1 Normally Off and Normally On MESFETs; 9.2.2 High-electron-mobility Transistor; 9.3 Basic MOS Structure; 9.3.1 Depletion Layer Thickness; 9.3.2 Work-function Difference; 9.4 Capacitance-Voltage Characteristics of MOS Capacitor; 9.4.1 Interface Traps and Oxide Charge; 9.4.2 Effect of Oxide Charge on C-V Characteristics; 9.5 MOS Field-effect Transistor; 9.5.1 MOSFET Characteristics; 9.5.2 Short Channel Effect; 9.5.3 Control of Threshold Voltage; 9.5.4 Substrate Bias Effect; 9.5.5 Sub-threshold Characteristics; 9.5.6 Equivalent Circuit for MOSFET; 9.5.7 MOSFET Scaling and Hot Electron Effects; 9.5.8 Drain-induced Barrier Lowering; 9.5.9 Short Channel and Narrow Width Effect; 9.5.10 Gate-induced Drain Leakage; 9.5.11 Comparison of BJT with MOSFET; 9.5.12 Types of MOSFET; 10 : Opto-electronic Devices; Introduction; 10.1 Optical Absorption; 10.1.1 Optical Absorption; 10.1.2 Excess Carrier Generation Rate; 10.2 Photovoltaic Cells; 10.2.1 p-n Junction Solar Cells; 10.2.2 Conversion Efficiency; 10.2.3 Effect of Series Resistance; 10.2.4 Heterojunction Solar Cells; 10.2.5 Amorphous Silicon Solar Cells; 10.3 Photodetectors; 10.3.1 Photoconductors; 10.3.2 Photodiodes; 10.3.3 Phototransistors; 10.4 Light-emitting Diodes; 10.4.1 LED Materials and Devices; 10.4.2 Loss Mechanisms and Structure; 10.5 Laser Diodes; 10.5.1 Materials and Structures; 10.5.2 Population Inversion; 11 : Power Devices; Introduction; 11.1 Bipolar Power Transistors; 11.1.1 Current Crowding; 11.1.2 Vertical Transistor Structure; 11.1.3 Transistor Characteristics; 11.1.4 Darlington Pair Configuration; 11.2 Power MOSFETs; 11.2.1 Structures; 11.2.2 Power MOSFET Characteristics; 11.3 Heat Sink; 11.4 Semiconductor Controlled Rectifier; 11.4.1 Fundamental Characteristics; 11.4.2 Two-transistor Model; 11.4.3 Depletion Layer Width and Effect of Gate Current; 11.4.4 Bidirectional Thyristors; 11.5 Gate Turn-off Thyristor; 11.6 Insulated-gate Bipolar Transistor; 11.7 Unijunction Transistor; 12 : Integrated Circuits and Micro-electromechanical Systems; Introduction; 12.1 Photolithography; 12.2 Etching Techniques; 12.2.1 Wet Etching; 12.2.2 Dry Etching; 12.3 Passive Components; 12.3.1 Resistors; 12.3.2 Capacitors; 12.3.3 Inductors; 12.4 Bipolar Technology; 12.4.1 Basic Process; 12.4.2 Dielectric Isolation; 12.5 MOSFET Technology; 12.5.1 NMOS Process; 12.5.2 NMOS Memory Devices; 12.5.3 Charge-coupled Devices; 12.5.4 CMOS Technology; 12.6 MESFET Technology; 12.7 Micro-electromechanical Systems; 12.7.1 Basic Processes; 13 : Microwave Devices; Introduction; 13.1 Types of Microwave Devices; 13.2 Working Principle of Gunn and IMPATT Diodes; 13.2.1 Gunn Diode; 13.2.2 IMPATT Diode; 13.3 Operation of TRAPATT and BARITT Diodes; 13.3.1 TRAPATT Diode; 13.3.2 BARITT Diode; 14 : Rectifiers and Power Supplies; Introduction; 14.1 Single-phase Rectifiers; 14.1.1 Half-wave Rectifier; 14.1.2 Full-wave Rectifier; 14.1.3 Bridge Rectifier; 14.1.4 Ripple Factor; 14.2 Filter Circuits; 14.2.1 Shunt-capacitor Filter; 14.2.2 ? Filter; 14.2.3 RC Filter; 14.3 Voltage Regulators; 14.3.1 Zener Diode Regulator; 14.3.2 Series Voltage Regulator; 14.4 Switched-mode Power Supply; Appendix A: Important Physical Constants; Appendix B: Important Lattice Constants; Appendix C: Properties of Some Common Semiconductors; Appendix D: Bandgaps of Some Semiconductors Relative to the Optical Spectrum; Appendix E: Properties of Silicon, Germanium and Gallium Arsenide at 300 K; Appendix F: Important Properties of Si3N4 and SiO2 at 300 K; Appendix G: Table of the Error Function; Appendix H: The Periodic Table of Elements; Appendix I: International System of Units; References; Index

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