Circuit Design for CMOS VLSI

工程热物理

售   价:
442.00
作      者
出  版 社
出版时间
2011年11月15日
装      帧
平装
ISBN
9781461366096
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页      码
480
语      种
英语
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图书简介
During the last decade, CMOS has become increasingly attractive as a basic integrated circuit technology due to its low power (at moderate frequencies), good scalability, and rail-to-rail operation. There are now a variety of CMOS circuit styles, some based on static complementary con­ ductance properties, but others borrowing from earlier NMOS techniques and the advantages of using clocking disciplines for precharge-evaluate se­ quencing. In this comprehensive book, the reader is led systematically through the entire range of CMOS circuit design. Starting with the in­ dividual MOSFET, basic circuit building blocks are described, leading to a broad view of both combinatorial and sequential circuits. Once these circuits are considered in the light of CMOS process technologies, impor­ tant topics in circuit performance are considered, including characteristics of interconnect, gate delay, device sizing, and I/O buffering. Basic circuits are then composed to form macro elements such as multipliers, where the reader acquires a unified view of architectural performance through par­ allelism, and circuit performance through careful attention to circuit-level and layout design optimization. Topics in analog circuit design reflect the growing tendency for both analog and digital circuit forms to be combined on the same chip, and a careful treatment of BiCMOS forms introduces the reader to the combination of both FET and bipolar technologies on the same chip to provide improved performance.
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